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Electrical characterization of transparent p-i-n heterojunction diodes

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Electrical characterization of transparent p-i-n heterojunction diodes

Auteurs : RBID : Pascal:01-0459951

Descripteurs français

Pascal (Inist)
- 8530K, 7340E, 8530D, 7866L, 7840F, Etude expérimentale, Cuivre composé, Calcium, Indium composé, Etain composé, Zinc composé, Semiconducteur fortement dopé, Effet redresseur, Diode couche intrinsèque, Piège électron, Piège trou, Conduction limitée charge espace, Capacité électrique, Spectre visible.
Wicri :
- concept : Calcium.

English descriptors

KwdEn :
- Calcium, Capacitance, Copper compounds, Electron traps, Experimental study, Heavily doped semiconductors, Hole traps, Indium compounds, Rectification, Space-charge-limited conduction, Tin compounds, Visible spectra, Zinc compounds, p i n diodes, semiconductor device measurement.

Abstract

Transparent p-i-n heterojunction diodes are fabricated using heavily doped, p-type CuYO₂ and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range -4-4 V. The forward-bias current-voltage characteristics are dominated by the flow of space-charge-limited current, which is ascribed to single-carrier injection into the i-ZnO layer. Capacitance measurements show strong frequency dispersion, which is attributed to i-ZnO traps. The diode structure has a total thickness of 0.75 μm and an optical transmission of ∼35%-65% in the visible region. © 2001 American Institute of Physics.

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Pascal:01-0459951

Le document en format XML

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<author><name sortKey="Hoffman, R L" uniqKey="Hoffman R">R. L. Hoffman</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331-3211</s1>
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<sZ>2 aut.</sZ>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Oregon</region>
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<wicri:cityArea>Department of Electrical and Computer Engineering, Oregon State University, Corvallis</wicri:cityArea>
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<author><name sortKey="Wager, J F" uniqKey="Wager J">J. F. Wager</name>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Oregon</region>
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<wicri:cityArea>Department of Electrical and Computer Engineering, Oregon State University, Corvallis</wicri:cityArea>
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<author><name sortKey="Jayaraj, M K" uniqKey="Jayaraj M">M. K. Jayaraj</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, Oregon State University, Corvallis, Oregon 97331</s1>
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<sZ>4 aut.</sZ>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Oregon</region>
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<wicri:cityArea>Department of Physics, Oregon State University, Corvallis</wicri:cityArea>
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<author><name sortKey="Tate, J" uniqKey="Tate J">J. Tate</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, Oregon State University, Corvallis, Oregon 97331</s1>
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<term>Heavily doped semiconductors</term>
<term>Hole traps</term>
<term>Indium compounds</term>
<term>Rectification</term>
<term>Space-charge-limited conduction</term>
<term>Tin compounds</term>
<term>Visible spectra</term>
<term>Zinc compounds</term>
<term>p i n diodes</term>
<term>semiconductor device measurement</term>
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<front><div type="abstract" xml:lang="en">Transparent p-i-n heterojunction diodes are fabricated using heavily doped, p-type CuYO<sub>2</sub>
 and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range -4-4 V. The forward-bias current-voltage characteristics are dominated by the flow of space-charge-limited current, which is ascribed to single-carrier injection into the i-ZnO layer. Capacitance measurements show strong frequency dispersion, which is attributed to i-ZnO traps. The diode structure has a total thickness of 0.75 μm and an optical transmission of ∼35%-65% in the visible region. © 2001 American Institute of Physics.</div>
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<fC01 i1="01" l="ENG"><s0>Transparent p-i-n heterojunction diodes are fabricated using heavily doped, p-type CuYO<sub>2</sub>
 and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range -4-4 V. The forward-bias current-voltage characteristics are dominated by the flow of space-charge-limited current, which is ascribed to single-carrier injection into the i-ZnO layer. Capacitance measurements show strong frequency dispersion, which is attributed to i-ZnO traps. The diode structure has a total thickness of 0.75 μm and an optical transmission of ∼35%-65% in the visible region. © 2001 American Institute of Physics.</s0>
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Electrical characterization of transparent p-i-n heterojunction diodes

Electrical characterization of transparent p-i-n heterojunction diodes

Descripteurs français

English descriptors

Abstract

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